US 11,670,663 B2
High performance image sensor
Tung-Ting Wu, Taipei (TW); Jhy-Jyi Sze, Hsin-Chu (TW); and Yimin Huang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Apr. 21, 2021, as Appl. No. 17/236,343.
Application 17/236,343 is a continuation of application No. 16/352,164, filed on Mar. 13, 2019, granted, now 10,991,746.
Claims priority of provisional application 62/751,761, filed on Oct. 29, 2018.
Prior Publication US 2021/0265412 A1, Aug. 26, 2021
Int. Cl. H01L 27/146 (2006.01); H01L 31/036 (2006.01)
CPC H01L 27/14636 (2013.01) [H01L 27/14607 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 31/036 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensing integrated chip, comprising:
a semiconductor substrate having sidewalls defining one or more trenches on opposing sides of a region of the semiconductor substrate;
one or more dielectrics disposed within the one or more trenches;
wherein the semiconductor substrate comprises a plurality of flat surfaces arranged within a pixel region that is laterally between the one or more trenches, adjacent ones of the plurality of flat surfaces defining a plurality of triangular shaped protrusions and alternative ones of the plurality of flat surfaces being substantially parallel to one another, as viewed along a cross-sectional view; and
wherein outermost ones of the plurality of flat surfaces arranged along a periphery of the pixel region extend vertically past inner ones of the plurality of flat surfaces within a central part of the pixel region, as viewed along the cross-sectional view.