US 11,670,661 B2
Image sensor and method of fabricating same
Jinyoung Kim, Ulsan (KR); Euiyeol Kim, Yongin-si (KR); Hyounmin Baek, Yongin-si (KR); Jeong-Ho Lee, Seoul (KR); Youngwoo Chung, Yongin-si (KR); and Heegeun Jeong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 21, 2020, as Appl. No. 16/934,278.
Claims priority of application No. 10-2019-0171635 (KR), filed on Dec. 20, 2019; and application No. 10-2020-0042280 (KR), filed on Apr. 7, 2020.
Prior Publication US 2021/0193706 A1, Jun. 24, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions;
a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer; and
a first contact provided on the second surface and connected to the semiconductor pattern,
wherein a height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.