US 11,670,636 B2
Method for fabricating semiconductor device
Tae Yong Kwon, Suwon-si (KR); Byoung-Gi Kim, Suwon-si (KR); Ki Hwan Lee, Suwon-si (KR); and Jung Han Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 18, 2022, as Appl. No. 17/577,549.
Application 17/577,549 is a continuation of application No. 16/735,984, filed on Jan. 7, 2020, granted, now 11,282,835.
Claims priority of application No. 10-2019-0057279 (KR), filed on May 16, 2019.
Prior Publication US 2022/0139912 A1, May 5, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/823431 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
forming a plurality of mandrel patterns on a substrate;
forming an upper spacer on opposite side walls of each of the plurality of mandrel patterns;
forming a lower spacer on opposite side walls of a pattern onto which the upper spacer is transferred;
patterning the substrate using the lower spacer to form a first fin group and a first dummy fin group arranged alternately and repeatedly along a first direction; and
removing the first dummy fin group,
wherein the first fin group includes first and second fins arranged along the first direction, adjacent to each other and extending in a second direction intersecting the first direction, respectively,
wherein the first dummy fin group includes first and second dummy fins arranged along the first direction, adjacent to each other and extending in the second direction, respectively,
wherein the first and second fins in a same first fin group are disposed at a first fin pitch,
wherein the second fin in the first fin group and the first dummy fin in the first dummy fin group are disposed at the first fin pitch,
wherein the first and second dummy fins in a same first dummy fin group are disposed at a second fin pitch different from the first fin pitch, and
wherein the second dummy fin in the first dummy fin group and the first fin in an adjacent additional first fin group are disposed at the first fin pitch.