US 11,670,616 B2
Modified direct bond interconnect for FPAs
Sushant Sonde, Westmont, IL (US); Yong Chang, Naperville, IL (US); and Silviu Velicu, Willowbrook, IL (US)
Assigned to EPIR, INC., Bolingbrook, IL (US)
Filed by Sushant Sonde, Westmont, IL (US); Yong Chang, Naperville, IL (US); and Silviu Velicu, Willowbrook, IL (US)
Filed on Jun. 22, 2021, as Appl. No. 17/354,859.
Claims priority of provisional application 63/042,402, filed on Jun. 22, 2020.
Prior Publication US 2022/0052020 A1, Feb. 17, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 27/146 (2006.01)
CPC H01L 24/81 (2013.01) [H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/81013 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/81896 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of hybridizing an IRFPA having an IR component and a ROIC component and interconnects between the two components, comprising the steps of:
providing an IR detector array and a Si ROIC;
depositing dielectric layers on the IR detector array and on the Si ROIC;
patterning the dielectric layers on both components to create openings to expose contact areas on each of the IR detector array and the Si ROIC;
depositing indium to fill the openings on both the IR detector array and the Si ROIC to create indium bumps, the indium bumps electrically connected to the contact areas of the IR detector array and the Si ROIC respectively and exposed on a top surface of the IR detector array and on the Si ROIC;
activating exposed dielectric layers on the IR detector array and the Si ROIC in a plasma; and
closely contacting the indium bumps of the IR detector array and the Si ROIC while bonding together the exposed dielectric surfaces of the IR detector array and the Si ROIC.