US 11,670,615 B2
Bonded structures
Liang Wang, Milpitas, CA (US); Rajesh Katkar, Milpitas, CA (US); Javier A. DeLaCruz, San Jose, CA (US); and Arkalgud R. Sitaram, Cupertino, CA (US)
Assigned to ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Dec. 22, 2020, as Appl. No. 17/131,588.
Application 17/131,588 is a continuation of application No. 16/724,017, filed on Dec. 20, 2019, granted, now 10,879,207.
Application 16/724,017 is a continuation of application No. 15/979,312, filed on May 14, 2018, granted, now 10,546,832, issued on Jan. 28, 2020.
Application 15/979,312 is a continuation of application No. 15/387,385, filed on Dec. 21, 2016, granted, now 10,002,844, issued on Jun. 19, 2018.
Prior Publication US 2021/0202428 A1, Jul. 1, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/10 (2006.01); B81C 1/00 (2006.01); H05K 1/11 (2006.01)
CPC H01L 24/29 (2013.01) [B81C 1/00269 (2013.01); B81C 1/00293 (2013.01); H01L 23/10 (2013.01); H01L 23/49838 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 23/53242 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); B81B 2207/012 (2013.01); B81C 2203/035 (2013.01); H01L 23/562 (2013.01); H01L 24/80 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/06155 (2013.01); H01L 2224/06165 (2013.01); H01L 2224/06505 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08237 (2013.01); H01L 2224/29019 (2013.01); H01L 2224/8001 (2013.01); H01L 2224/80047 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H05K 1/111 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A bonded structure comprising:
a first semiconductor element including first conductive features and first non-conductive features;
a second semiconductor element including second conductive features and second non-conductive features, the second semiconductor element comprising an integrated device, the first semiconductor element directly bonded to the second semiconductor element such that the first conductive features are directly bonded to corresponding second conductive features without an intervening adhesive layer and the first non-conductive features are directly bonded to corresponding second non-conductive features without an intervening adhesive; and
a crack stopper extending vertically through a portion of the second semiconductor element, the crack stopper including alternating wider and narrower segments.