US 11,670,595 B2
Semiconductor device structure and methods of forming the same
Yu-Chen Chan, Taichung (TW); Shu-Wei Li, Hsinchu (TW); Shin-Yi Yang, New Taipei (TW); Ming-Han Lee, Taipei (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Feb. 25, 2021, as Appl. No. 17/184,942.
Prior Publication US 2022/0270970 A1, Aug. 25, 2022
Int. Cl. H01L 23/535 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/535 (2013.01) [H01L 23/53276 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An interconnection structure, comprising:
a first conductive feature comprising a two-dimensional material layer, a first conductive layer disposed on the two-dimensional material layer, and a second conductive layer, wherein the two-dimensional material layer is disposed on the second conductive layer;
a second conductive feature disposed over the first conductive feature and through the first conductive layer, the two-dimensional material layer, and in the second conductive layer; and
a dielectric material disposed adjacent the first and second conductive features.