US 11,670,591 B2
Semiconductor device and method of fabricating same
In-Hyuk Choi, Seoul (KR); Wonchul Lee, Seongnam-si (KR); and Joonhyoung Yang, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 17, 2021, as Appl. No. 17/404,757.
Claims priority of application No. 10-2021-0020108 (KR), filed on Feb. 15, 2021.
Prior Publication US 2022/0262721 A1, Aug. 18, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 23/5226 (2013.01); H01L 29/0649 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate including a first region and a second region;
a first interlayer insulating layer covering the second region;
a capping layer disposed on the first interlayer insulating layer, wherein an upper surface of the capping layer includes a first trench;
conductive patterns spaced apart on the capping layer, wherein side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench; and
a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns,
wherein the peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface of the first trench.