US 11,670,583 B2
Integrated inductor with a stacked metal wire
Yaojian Leng, Portland, OR (US); and Justin Sato, West Linn, OR (US)
Assigned to Microchip Technology Incorporated, Chandler, AZ (US)
Filed by Microchip Technology incorporated, Chandler, AZ (US)
Filed on Dec. 10, 2020, as Appl. No. 17/117,288.
Claims priority of provisional application 63/034,547, filed on Jun. 4, 2020.
Prior Publication US 2021/0384122 A1, Dec. 9, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01F 27/32 (2006.01); H01F 27/28 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/5227 (2013.01) [H01F 27/2823 (2013.01); H01F 27/32 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 28/10 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device, comprising:
an IC structure including an integrated inductor;
wherein the integrated inductor comprises an elongated inductor wire defined by a metal layer stack including an upper metal layer, a middle metal layer, and a lower metal layer; and
wherein a lateral width of the middle metal layer of the inductor wire is greater than 1 μm; and
wherein the middle metal layer of the inductor wire is formed in a common layer with at least one metal via distinct from the integrated inductor.