US 11,670,580 B2
Subtractive via etch for MIMCAP
Yann Mignot, Slingerlands, NY (US); Hsueh-Chung Chen, Cohoes, NY (US); Junli Wang, Slingerlands, NY (US); Mary Claire Silvestre, Clifton Park, NY (US); and Chi-Chun Liu, Altamont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 30, 2021, as Appl. No. 17/461,096.
Prior Publication US 2023/0063908 A1, Mar. 2, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/5223 (2013.01) [H01L 28/90 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A structure comprising:
a bottom electrode located on a surface of an interconnect level, the bottom electrode having a base portion and a via portion that extends upward from a surface of the base portion;
a capacitor high-k dielectric material layer located on the base portion of the bottom electrode;
a high-k dielectric material spacer located along an entirety of a sidewall of the via portion of the bottom electrode, wherein the high-k dielectric material spacer and the capacitor high-k dielectric material layer are composed of a compositionally same high-k dielectric material, and wherein the high-k dielectric material spacer has a topmost surface that is coplanar with a topmost surface of the via portion of the bottom electrode and is entirely spaced apart from the capacitor high-k dielectric material layer;
a top electrode located on the capacitor high-k dielectric material layer;
a first contact structure contacting the via portion of the bottom electrode; and
a second contact structure contacting the top electrode.
 
10. A structure comprising:
a bottom electrode located on a surface of an interconnect level, the bottom electrode having a base portion and a via portion that extends upward from a surface of the base portion;
a capacitor high-k dielectric material layer located on the base portion of the bottom electrode;
a high-k dielectric material spacer located along an entirety of a sidewall of the via portion of the bottom electrode, wherein the high-k dielectric material spacer and the capacitor high-k dielectric material layer are composed of a compositionally same high-k dielectric material, and wherein the high-k dielectric material spacer has a topmost surface that is coplanar with a topmost surface of the via portion of the bottom electrode and is entirely spaced apart from the capacitor high-k dielectric material layer;
a top electrode located on the capacitor high-k dielectric material layer, the top electrode having a base portion and a via portion that extends upward from a surface of the base portion;
a first contact structure contacting the via portion of the bottom electrode; and
a second contact structure contacting the via portion of the top electrode.
 
14. A structure comprising:
a bottom electrode located on a surface of an interconnect level;
a capacitor high-k dielectric material layer located on the bottom electrode;
a top electrode located on the capacitor high-k dielectric material layer, the top electrode having a base portion and a via portion that extends upward from a surface of the base portion;
a first contact structure directly contacting the bottom electrode; and
a second contact structure contacting the via portion of the top electrode, wherein the capacitor high-k dielectric material layer is located entirely above a topmost surface of the bottom electrode and is laterally spaced apart from the first contact structure.