CPC H01L 23/3735 (2013.01) [H01L 23/053 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01)] | 18 Claims |
1. A semiconductor device, comprising:
a semiconductor chip having a first surface and a second surface opposite to the first surface;
a first heat dissipation member on the second surface of the semiconductor chip, the first heat dissipation member having a first vertical thermal conductivity in a direction perpendicular to the second surface, and a first horizontal thermal conductivity in a direction parallel to the second surface, the first vertical thermal conductivity being smaller than the first horizontal thermal conductivity; and
a second heat dissipation member comprising a vertical pattern penetrating the first heat dissipation member, the second heat dissipation member having a second vertical thermal conductivity that is greater than the first vertical thermal conductivity of the first heat dissipation member,
wherein the vertical pattern completely surrounds the first heat dissipation member.
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