US 11,670,568 B2
Semiconductor device and semiconductor package having the same
Seonho Lee, Cheonan-si (KR); Jinsu Kim, Seoul (KR); Junwoo Myung, Cheonan-si (KR); Yongjin Park, Yongin-si (KR); and Jaekul Lee, Yongin-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 23, 2020, as Appl. No. 17/29,334.
Claims priority of application No. 10-2019-0170815 (KR), filed on Dec. 19, 2019.
Prior Publication US 2021/0193555 A1, Jun. 24, 2021
Int. Cl. H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 23/053 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/3735 (2013.01) [H01L 23/053 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor chip having a first surface and a second surface opposite to the first surface;
a first heat dissipation member on the second surface of the semiconductor chip, the first heat dissipation member having a first vertical thermal conductivity in a direction perpendicular to the second surface, and a first horizontal thermal conductivity in a direction parallel to the second surface, the first vertical thermal conductivity being smaller than the first horizontal thermal conductivity; and
a second heat dissipation member comprising a vertical pattern penetrating the first heat dissipation member, the second heat dissipation member having a second vertical thermal conductivity that is greater than the first vertical thermal conductivity of the first heat dissipation member,
wherein the vertical pattern completely surrounds the first heat dissipation member.