CPC H01L 21/823437 (2013.01) [H01L 21/28088 (2013.01); H01L 21/28158 (2013.01); H01L 21/324 (2013.01); H01L 21/76832 (2013.01); H01L 21/823431 (2013.01); H01L 21/823462 (2013.01); H01L 27/0886 (2013.01); H01L 29/4966 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a fin on a substrate;
forming a gate dielectric stack on the fin, wherein the gate dielectric stack comprises a high-k dielectric layer disposed on an interfacial dielectric layer;
exposing a surface of the high-k dielectric layer to a fluorine-based gas.
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