US 11,670,541 B2
Methods of manufacturing semiconductor device using phase shift mask
Chun-Chieh Wang, Yunlin County (TW); Hung-Jui Kuo, Hsinchu (TW); Jaw-Jung Shin, Hsinchu (TW); and Ming-Tan Lee, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 29, 2021, as Appl. No. 17/536,105.
Application 17/536,105 is a continuation of application No. 16/590,375, filed on Oct. 2, 2019, granted, now 11,189,521.
Claims priority of provisional application 62/752,358, filed on Oct. 30, 2018.
Prior Publication US 2022/0084874 A1, Mar. 17, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/48 (2006.01)
CPC H01L 21/76802 (2013.01) [H01L 21/4853 (2013.01); H01L 21/76841 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first photoresist material over a seed layer;
exposing the first photoresist material through a phase shift mask;
developing the first photoresist material to form a first photoresist layer, wherein the first photoresist layer comprises a plurality of first photoresist patterns and a plurality of first openings between the plurality of first photoresist patterns;
forming a first conductive material in the plurality of first openings;
forming a second photoresist layer over the first conductive material, wherein the second photoresist layer comprises at least one second opening;
forming a second conductive material in the at least one second opening;
removing the first photoresist layer and the second photoresist layer, to form a plurality of first conductive patterns and at least one second conductive pattern; and
using the plurality of first conductive patterns as a mask, partially removing the seed layer, to form a plurality of seed layer patterns under the plurality of first conductive patterns.