US 11,670,536 B2
3D semiconductor device and structure including power distribution grids
Zvi Or-Bach, Haifa (IL); Brian Cronquist, Klamath Falls, OR (US); and Deepak Sekar, Sunnyvale, CA (US)
Assigned to Monolithic 3D Inc., Klamath Falls, OR (US)
Filed by Monolithic 3D Inc., Klamath Falls, OR (US)
Filed on Dec. 31, 2022, as Appl. No. 18/92,253.
Application 18/092,253 is a continuation in part of application No. 17/898,421, filed on Aug. 29, 2022, granted, now 11,574,818.
Application 17/898,421 is a continuation in part of application No. 17/846,010, filed on Jun. 22, 2022, granted, now 11,527,416, issued on Dec. 13, 2022.
Application 17/846,010 is a continuation in part of application No. 17/705,392, filed on Mar. 28, 2022, granted, now 11,430,668, issued on Aug. 30, 2022.
Application 17/705,392 is a continuation in part of application No. 17/567,680, filed on Jan. 3, 2022, granted, now 11,430,667, issued on Aug. 30, 2022.
Application 17/567,680 is a continuation in part of application No. 17/498,486, filed on Oct. 11, 2021, granted, now 11,257,689, issued on Feb. 22, 2022.
Application 17/498,486 is a continuation in part of application No. 17/346,574, filed on Jun. 14, 2021, granted, now 11,177,140, issued on Nov. 16, 2021.
Application 17/346,574 is a continuation in part of application No. 17/222,960, filed on Apr. 5, 2021, granted, now 11,087,995, issued on Aug. 10, 2021.
Application 17/222,960 is a continuation in part of application No. 17/115,766, filed on Dec. 8, 2020, granted, now 11,004,694, issued on May 11, 2021.
Application 17/115,766 is a continuation in part of application No. 17/061,563, filed on Oct. 1, 2020, granted, now 10,903,089, issued on Jan. 26, 2021.
Application 17/061,563 is a continuation in part of application No. 16/114,211, filed on Aug. 28, 2018, granted, now 10,892,169, issued on Jan. 12, 2021.
Application 16/114,211 is a continuation in part of application No. 15/913,917, filed on Mar. 6, 2018, granted, now 10,115,663, issued on Oct. 30, 2018.
Application 15/913,917 is a continuation in part of application No. 15/470,872, filed on Mar. 27, 2017, granted, now 9,941,275, issued on Apr. 10, 2018.
Application 15/470,872 is a continuation of application No. 13/864,245, filed on Apr. 17, 2013, abandoned.
Application 13/864,245 is a continuation of application No. 13/803,437, filed on Mar. 14, 2013, granted, now 9,385,058, issued on Jul. 5, 2016.
Application 13/803,437 is a continuation in part of application No. 13/731,108, filed on Dec. 30, 2012, granted, now 9,871,034, issued on Jan. 16, 2018.
Application 13/731,108 is a continuation of application No. 13/730,897, filed on Dec. 29, 2012, abandoned.
Prior Publication US 2023/0142628 A1, May 11, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 21/74 (2006.01)
CPC H01L 21/743 (2013.01) 20 Claims
OG exemplary drawing
 
1. A 3D device comprising:
a first level, said first level comprising a first single crystal layer;
control circuitry disposed in and/or on said first level,
wherein said control circuitry comprises first single crystal transistors;
a first metal layer disposed above said first single crystal layer;
a second metal layer disposed above said first metal layer;
a third metal layer disposed above said second metal layer;
at least one second level disposed on top of or above said third metal layer;
wherein said at least one second level comprises a plurality of second transistors;
a fourth metal layer disposed above said at least one second level;
a fifth metal layer disposed above said fourth metal layer,
wherein said at least one second level comprises at least one first oxide layer overlaid by a transistor layer and then overlaid by a second oxide layer,
wherein a distance from a top of said first oxide layer to a bottom of said second oxide layer is less than two microns; and
a global power distribution grid,
wherein said global power distribution grid comprises said fifth metal layer; and
a local power distribution grid,
wherein said local power distribution grid comprises said second metal layer, and
wherein a first typical thickness of said fifth metal layer is at least 50% greater than a second typical thickness of said second metal layer.