US 11,670,517 B2
Substrate processing method and substrate processing device
Sei Negoro, Kyoto (JP); and Kenji Kobayashi, Kyoto (JP)
Assigned to SCREEN Holdings Co., Ltd.
Appl. No. 17/262,807
Filed by SCREEN Holdings Co., Ltd., Kyoto (JP)
PCT Filed Jul. 4, 2019, PCT No. PCT/JP2019/026609
§ 371(c)(1), (2) Date Jan. 25, 2021,
PCT Pub. No. WO2020/044789, PCT Pub. Date Mar. 5, 2020.
Claims priority of application No. JP2018-163796 (JP), filed on Aug. 31, 2018; and application No. JP2019-075345 (JP), filed on Apr. 11, 2019.
Prior Publication US 2021/0313191 A1, Oct. 7, 2021
Int. Cl. H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/32134 (2013.01) [H01L 21/02052 (2013.01); H01L 21/32055 (2013.01); H01L 21/67023 (2013.01); H01L 21/68764 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A substrate processing method to supply an alkaline etching liquid to a substrate on which an etching object including polysilicon and a non-etching object different from the etching object are exposed, the substrate processing method comprising:
an etching liquid making step of making the alkaline etching liquid including quaternary ammonium hydroxide, water and inhibitor that inhibits contact of a hydroxide ion generated from the quaternary ammonium hydroxide and the etching object; and
a selective etching step of etching the etching object while inhibiting etching of the non-etching object by supplying the etching liquid made in the etching liquid making step to the substrate on which the etching object and the non-etching object are exposed, wherein
the etching liquid making step includes a concentration determining step of determining concentration of the inhibitor in the etching liquid based on a target value of a difference of etching speeds of a plurality of crystal planes of a silicon single crystal constituting the polysilicon.