US 11,670,513 B2
Apparatus and systems for substrate processing for lowering contact resistance
Yueh Sheng Ow, Singapore (SG); Junqi Wei, Singapore (SG); Wen Long Favier Shoo, Singapore (SG); Ananthkrishna Jupudi, Singapore (SG); Takashi Shimizu, Chiba-Prefecture (JP); Kelvin Boh, Singapore (SG); and Tuck Foong Koh, Singapore (SG)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Apr. 11, 2021, as Appl. No. 17/227,327.
Application 17/227,327 is a division of application No. 16/399,478, filed on Apr. 30, 2019, granted, now 11,328,929.
Claims priority of provisional application 62/665,114, filed on May 1, 2018.
Prior Publication US 2021/0233773 A1, Jul. 29, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/30 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/3003 (2013.01) [H01L 21/67017 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/6831 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An apparatus for processing a substrate, comprising;
a process chamber having a processing space contained therein;
a process shield disposed within the process chamber and forming an upper and outer boundary of the processing space, wherein the process shield comprises a process gas inlet, shaped and located on the process shield for receiving a hydrogen gas from an external gas source and directing the received hydrogen gas over a top of the substrate to clean the substrate; and
a pedestal disposed in the process chamber opposite the process shield and forming a lower boundary of the processing space, wherein the pedestal comprises:
an electrostatic chuck assembly to enable chucking of a substrate on the pedestal;
at least one first channel for carrying a cooling liquid along the pedestal to cool the substrate on the pedestal; and
at least one second channel for carrying a cooling gas along the pedestal and ending in a respective hole in a top portion of the pedestal for exposing the cooling gas to a backside of the substrate.