CPC H01L 21/3003 (2013.01) [H01L 21/67017 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/6831 (2013.01)] | 18 Claims |
1. An apparatus for processing a substrate, comprising;
a process chamber having a processing space contained therein;
a process shield disposed within the process chamber and forming an upper and outer boundary of the processing space, wherein the process shield comprises a process gas inlet, shaped and located on the process shield for receiving a hydrogen gas from an external gas source and directing the received hydrogen gas over a top of the substrate to clean the substrate; and
a pedestal disposed in the process chamber opposite the process shield and forming a lower boundary of the processing space, wherein the pedestal comprises:
an electrostatic chuck assembly to enable chucking of a substrate on the pedestal;
at least one first channel for carrying a cooling liquid along the pedestal to cool the substrate on the pedestal; and
at least one second channel for carrying a cooling gas along the pedestal and ending in a respective hole in a top portion of the pedestal for exposing the cooling gas to a backside of the substrate.
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