US 11,670,511 B2
Semiconductor device and method for fabricating the same including re-growth process to form non-uniform gate dielectric layer
Seon-Haeng Lee, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jul. 1, 2021, as Appl. No. 17/365,063.
Application 17/365,063 is a continuation of application No. 16/533,370, filed on Aug. 6, 2019, granted, now 11,081,357.
Claims priority of application No. 10-2018-0162195 (KR), filed on Dec. 14, 2018.
Prior Publication US 2021/0327716 A1, Oct. 21, 2021
Int. Cl. H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01)
CPC H01L 21/28176 (2013.01) [H01L 21/28035 (2013.01); H01L 21/823857 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/4983 (2013.01); H01L 29/66568 (2013.01); H01L 29/7856 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a gate structure including a dielectric material over a substrate and a columnar crystal grain material over the dielectric material, the gate structure including a source side and a drain side;
an oxidation promotion species doped on the drain side of the gate structure to increase a thickness of the dielectric material on the drain side of the gate structure; and
a source region and a drain region formed in the substrate,
wherein the source region and the drain region are formed to laterally extend to overlap with the source side and the drain side of the gate structure, respectively,
wherein the dielectric material of the gate structure has a thickness that gradually and continuously increases from the source side of the gate structure toward the drain side of the gate structure.