US 11,670,508 B2
Methods and material deposition systems for forming semiconductor layers
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Feb. 9, 2022, as Appl. No. 17/650,506.
Application 17/650,506 is a continuation of application No. 16/949,861, filed on Nov. 17, 2020, granted, now 11,282,704.
Application 16/949,861 is a continuation of application No. PCT/IB2019/054463, filed on May 29, 2019.
Claims priority of provisional application 62/682,005, filed on Jun. 7, 2018.
Prior Publication US 2022/0270876 A1, Aug. 25, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/02631 (2013.01) [H01L 21/0262 (2013.01); H01L 21/02263 (2013.01); H01L 21/02554 (2013.01); H01L 22/12 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A material deposition system comprising:
a rotation mechanism that rotates a substrate deposition plane of a substrate around a center axis of the substrate deposition plane;
a heater configured to heat the substrate;
a material source that supplies a material to the substrate, wherein the material source has i) an exit aperture with an exit aperture plane and ii) a predetermined material ejection spatial distribution from the exit aperture plane, the predetermined material ejection spatial distribution having a symmetry axis which intersects the substrate at a point offset from the center axis, wherein the exit aperture is positioned at an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate; and
a positioning mechanism that allows dynamic adjusting of the orthogonal distance, the lateral distance, or the tilt angle;
wherein the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate.