US 11,670,506 B2
SiC epitaxial wafer and method for manufacturing same
Koji Kamei, Chichibu (JP)
Assigned to SHOWA DENKO K.K., Tokyo (JP)
Appl. No. 16/620,088
Filed by SHOWA DENKO K.K., Tokyo (JP)
PCT Filed May 14, 2018, PCT No. PCT/JP2018/018498
§ 371(c)(1), (2) Date Dec. 6, 2019,
PCT Pub. No. WO2019/003668, PCT Pub. Date Jan. 3, 2019.
Claims priority of application No. JP2017-126744 (JP), filed on Jun. 28, 2017.
Prior Publication US 2020/0203163 A1, Jun. 25, 2020
Int. Cl. H01L 21/02 (2006.01); C23C 16/32 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01); C01B 32/956 (2017.01); C01B 32/90 (2017.01)
CPC H01L 21/02529 (2013.01) [C01B 32/956 (2017.08); C23C 16/325 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02428 (2013.01); H01L 21/02634 (2013.01); H01L 29/04 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); C01B 32/90 (2017.08)] 9 Claims
OG exemplary drawing
 
1. A SiC epitaxial wafer comprising:
a 4H-SiC single crystal substrate which has
a surface with an off angle with respect to a c-plane as a main surface and
a bevel part on a peripheral part; and
a SiC epitaxial film having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate,
wherein a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.