US 11,670,461 B2
Solid electrolytic capacitor for use at high voltages
Romana Sulakova, Usti nad Orlici (CZ); Miloslav Uher, Lanskroun (CZ); and Jan Petrzilek, Usti nad Orlici (CZ)
Assigned to KYOCERA AVX Components Corporation
Filed by AVX Corporation, Fountain Inn, SC (US)
Filed on Sep. 18, 2020, as Appl. No. 17/24,932.
Claims priority of provisional application 62/901,915, filed on Sep. 18, 2019.
Prior Publication US 2021/0082631 A1, Mar. 18, 2021
Int. Cl. H01G 9/15 (2006.01); H01G 9/052 (2006.01); H01G 9/028 (2006.01); H01G 9/042 (2006.01); H01G 9/08 (2006.01); C07D 495/04 (2006.01); C08L 65/00 (2006.01); H01G 13/00 (2013.01)
CPC H01G 9/15 (2013.01) [C07D 495/04 (2013.01); C08L 65/00 (2013.01); H01G 9/028 (2013.01); H01G 9/042 (2013.01); H01G 9/052 (2013.01); H01G 9/08 (2013.01); H01G 13/00 (2013.01); C08L 2203/20 (2013.01); C08L 2205/025 (2013.01); C08L 2205/14 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A capacitor comprising a capacitor element, the capacitor element comprising:
a sintered porous anode body;
a dielectric that overlies the anode body, wherein at least a portion of the dielectric at an external surface of the capacitor has a greater thickness than at least a portion at an interior surface of the capacitor; and
a solid electrolyte that overlies the dielectric, wherein the solid electrolyte contains an inner layer and an outer layer, wherein the inner layer is formed from an in situ-polymerized conductive polymer and the outer layer is formed from pre-polymerized conductive polymer particles, wherein the in-situ polymerized conductive polymer is formed from 3,4-ethylenedioxythiophene and an alkylated thiophene monomer having the following general structure:

OG Complex Work Unit Chemistry
wherein, R4 is an alkyl group, and
wherein the capacitor exhibits a leakage current at a temperature of 125° C. and a leakage current at a temperature of 23° C., wherein the ratio of the leakage current at 125° C. to the leakage current at 23° C. is about 8 or less; and
wherein the capacitor exhibits a dielectric strength of about 0.5 V/nm or more, wherein the dielectric has a thickness of from about 40 nm to about 100 nm.