US 11,670,381 B2
Read voltage calibration based on host IO operations
Ashutosh Malshe, Fremont, CA (US); Kishore Kumar Muchherla, Fremont, CA (US); Harish Reddy Singidi, Fremont, CA (US); Peter Sean Feeley, Boise, ID (US); Sampath Ratnam, San Jose, CA (US); Kulachet Tanpairoj, Santa Clara, CA (US); and Ting Luo, Santa Clara, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 6, 2021, as Appl. No. 17/313,249.
Application 16/782,720 is a division of application No. 16/436,567, filed on Jun. 10, 2019, granted, now 10,586,602.
Application 16/436,567 is a division of application No. 15/689,747, filed on Aug. 29, 2017, granted, now 10,347,344.
Application 17/313,249 is a continuation of application No. 17/017,291, filed on Sep. 10, 2020, granted, now 11,043,278.
Application 17/017,291 is a continuation of application No. 16/782,720, filed on Feb. 5, 2020, granted, now 10,777,284.
Prior Publication US 2021/0257031 A1, Aug. 19, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 7/00 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 16/04 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01); G11C 16/349 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 2207/2254 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory array comprising a group of multiple blocks of memory cells; and
a controller operably coupled to the memory array, the controller configured to perform operations comprising:
identifying, based at least in part on read operations to a block of the group, a condition to trigger a read level calibration; and
performing, in response to the identified condition, the read level calibration, the read level calibration comprising a sampling operation that evaluates a threshold voltage level of the group.