CPC G11C 7/04 (2013.01) [G11C 5/14 (2013.01); G11C 11/4074 (2013.01); H01L 27/108 (2013.01); H01L 27/1225 (2013.01); H01L 29/221 (2013.01)] | 6 Claims |
1. A semiconductor device comprising:
a transistor comprising a first gate and a second gate;
a voltage generation circuit electrically connected to the second gate of the transistor;
a capacitor, a first electrode of the capacitor is electrically connected to the second gate of the transistor; and
a voltage control circuit electrically connected to a second electrode of the capacitor,
wherein the first gate and the second gate overlap each other with a semiconductor layer therebetween, and
wherein the voltage control circuit is configured to convert a temperature information into a control voltage.
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