US 11,670,233 B2
Organic light emitting diode display device including driving transistor having overlapping layer between semiconductor layer and substrate
Young-In Hwang, Suwon-si (KR); Sung Ho Kim, Suwon-si (KR); Yong Ho Yang, Suwon-si (KR); and Seong Min Wang, Seongnam-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on May 3, 2022, as Appl. No. 17/735,204.
Application 17/735,204 is a continuation of application No. 17/191,782, filed on Mar. 4, 2021, granted, now 11,335,260.
Application 17/191,782 is a continuation of application No. 17/160,488, filed on Jan. 28, 2021, granted, now 11,514,854.
Application 17/160,488 is a continuation of application No. 16/356,142, filed on Mar. 18, 2019, granted, now 10,909,921, issued on Feb. 2, 2021.
Claims priority of application No. 10-2018-0074950 (KR), filed on Jun. 28, 2018.
Prior Publication US 2022/0262312 A1, Aug. 18, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/3233 (2016.01); H01L 51/00 (2006.01); H01L 27/32 (2006.01); G09G 3/3258 (2016.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC G09G 3/3233 (2013.01) [G09G 3/3258 (2013.01); H01L 27/3262 (2013.01); H01L 27/3276 (2013.01); H01L 51/0097 (2013.01); G09G 2300/0819 (2013.01); G09G 2320/0257 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 29/78648 (2013.01); H01L 29/78675 (2013.01); H01L 2251/5338 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An organic light emitting diode display, comprising:
a substrate;
a pixel disposed on the substrate;
a scan line;
a data line;
a driving voltage line; and
an initialization voltage line,
wherein the scan line, the data line, the driving voltage line, and the initialization voltage line are connected to the pixel,
wherein the pixel comprises:
an organic light emitting element;
a first switching transistor connected to the scan line;
a driving transistor that applies a current to the organic light emitting element; and
a compensation transistor that compensates an operation of the driving transistor,
wherein the driving transistor comprises:
an overlapping layer; and
a semiconductor layer comprising a channel,
wherein the compensation transistor comprises:
a semiconductor layer comprising a channel;
a first gate electrode disposed on the semiconductor layer of the compensation transistor; and
a second gate electrode disposed under the semiconductor layer of the compensation transistor,
wherein the overlapping layer of the driving transistor is disposed between the semiconductor layer of the driving transistor and the substrate and
wherein the overlapping layer of the driving transistor receives a driving voltage that flows to the driving voltage line.