US 11,668,743 B2
Semiconductor device defect analysis method
Hakgyun Kim, Suwon-si (KR); and Bumsuk Chung, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 8, 2021, as Appl. No. 17/469,169.
Claims priority of application No. 10-2021-0011035 (KR), filed on Jan. 26, 2021.
Prior Publication US 2022/0236314 A1, Jul. 28, 2022
Int. Cl. G01R 31/02 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); H01L 21/66 (2006.01)
CPC G01R 31/2642 (2013.01) [G01R 31/2648 (2013.01); G01R 31/2831 (2013.01); G01R 31/2884 (2013.01); G01R 31/2886 (2013.01); H01L 22/34 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of analyzing defects in a semiconductor device, the method comprising:
collecting current data by applying a test voltage to the semiconductor device;
extracting data within a decrease range from the current data;
dividing the current data into a first component value and a second component value using the current data and the data extracted from within the decrease range;
calculating a first quality index from the first component value satisfying a first function; and
calculating a second quality index from the second component value satisfying a second function that is different from the first function.