US 11,668,558 B2
Thickness estimation method and processing control method
Jongsu Kim, Seongnam-si (KR); Wansung Park, Seoul (KR); Doohyun Cho, Hwaseong-si (KR); Sungha Kim, Suwon-si (KR); Jaeyoun Wi, Suwon-si (KR); Kijoo Hong, Seoul (KR); Taejoong Kim, Hwaseong-si (KR); Youngsu Ryu, Suwon-si (KR); Kwangsung Lee, Yongin-si (KR); and Min Hong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 27, 2021, as Appl. No. 17/214,830.
Claims priority of application No. 10-2020-0109589 (KR), filed on Aug. 28, 2020.
Prior Publication US 2022/0065618 A1, Mar. 3, 2022
Int. Cl. G01B 11/06 (2006.01); G01N 21/95 (2006.01); G01N 21/84 (2006.01); G06T 7/00 (2017.01)
CPC G01B 11/0633 (2013.01) [G01N 21/8422 (2013.01); G01N 21/9501 (2013.01); G06T 7/0004 (2013.01); G01N 2021/8427 (2013.01); G06T 2207/30148 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A thickness estimation method comprising:
obtaining a test spectrum image from reflected light obtained by irradiating a test substrate with light;
obtaining test spectrum data included in a predetermined wavelength band at a plurality of positions on the test substrate, from the test spectrum image;
measuring a thickness of a test layer formed on the test substrate at the plurality of positions;
generating a regression analysis model using a correlation between the thickness of the test layer and the test spectrum data at the plurality of positions, and storing the regression analysis model in a memory;
irradiating a semiconductor substrate that is being transferred with light;
obtaining a spectrum image corresponding to an entire area of the semiconductor substrate; and
estimating a thickness of a target layer corresponding to the test layer over the entire area of the semiconductor substrate by applying the spectrum image to the regression analysis model.