CPC B81B 7/007 (2013.01) [B81C 1/00246 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0264 (2013.01); B81B 2207/092 (2013.01); B81B 2207/096 (2013.01); B81C 2201/0132 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0771 (2013.01); B81C 2203/0792 (2013.01)] | 20 Claims |
1. An integrated inertial sensor, comprising:
a substrate including semiconductor material;
a microelectromechanical system (MEMS) structure at a first surface of the substrate, the MEMS structure including a suspended inertial mass;
an application-specific integrated circuit (ASIC) electronic circuit electrically coupled to the MEMS structure, at a second surface of the substrate, and opposite to the first surface in a direction transverse to respective planes of extension of the first surface and the second surface;
electrically conductive interconnection structures extending through the substrate and having a first end at the first surface and a second end at the second surface, the interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit, and each interconnection structure includes a conductive connection portion surrounded by an insulation structure that electrically insulates the conductive connection portion from the substrate, the insulation structure has a ring conformation and includes a conductive core and an insulating coating that encloses the conductive core and electrically insulates the conductive core from the conductive connection portion, the conductive core and insulating coating together forming an insulation capacitor that electrically insulates the conductive connection portion from the substrate;
a covering coupled to the MEMS structure; and
a supporting layer coupled to the covering.
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