CPC H01L 43/02 (2013.01) [H01L 43/10 (2013.01); H01L 43/12 (2013.01)] | 20 Claims |
1. A structure, comprising:
a semiconductor substrate;
a first structure over the semiconductor substrate;
a first electrode positioned on a first surface of the first structure;
a first sidewall spacer positioned on the first surface of the first structure and laterally adjacent to a sidewall of the first electrode; and
a second sidewall spacer positioned laterally adjacent to a sidewall of the first structure and laterally adjacent to the first sidewall spacer.
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