US 11,659,714 B1
Ferroelectric device film stacks with texturing layer, and method of forming such
Niloy Mukherjee, San Ramon, CA (US); Ramamoorthy Ramesh, Moraga, CA (US); Sasikanth Manipatruni, Portland, OR (US); James Clarkson, Berkeley, CA (US); FNU Atiquzzaman, Orinda, CA (US); Gabriel Antonio Paulius Velarde, San Leandro, CA (US); and Jason Y. Wu, Albany, CA (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on May 7, 2021, as Appl. No. 17/315,111.
Int. Cl. H01L 27/11507 (2017.01); H01L 27/11502 (2017.01); H01L 49/02 (2006.01); H01L 27/11597 (2017.01); H01L 27/11592 (2017.01); H01L 27/11587 (2017.01)
CPC H01L 27/11597 (2013.01) [H01L 27/11502 (2013.01); H01L 27/11507 (2013.01); H01L 27/11587 (2013.01); H01L 27/11592 (2013.01); H01L 28/55 (2013.01); H01L 28/57 (2013.01); H01L 28/75 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A ferroelectric device comprising:
a first layer comprising ferroelectric material;
a second layer over the first layer, the second layer comprising a metallic electrode;
a third layer under the first layer, the third layer comprising a metallic electrode; and
a fourth layer adjacent to the third layer, wherein the fourth layer is to induce crystallographic orientation in the first layer, and wherein the fourth layer comprises one of:
FePt with a lattice constant of about 3.86 Angstroms;
IrMn3 with a lattice constant of about 3.78 Angstroms;
Sr2RuO4 with a lattice constant of about 3.84 Angstroms; or
BiSrCaCuO with a lattice constant of about 3.83 Angstroms.