CPC H04R 17/005 (2013.01) [H04R 31/00 (2013.01); B06B 1/0292 (2013.01); B06B 1/0629 (2013.01); H04R 2201/401 (2013.01); H04R 2217/03 (2013.01); H04R 2499/15 (2013.01); H10K 59/00 (2023.02)] | 10 Claims |
1. An ultrasonic generator comprising:
a substrate;
a lower electrode on the substrate;
an upper electrode on the lower electrode; and
an ultrasonic generation unit between the lower electrode and the upper electrode,
wherein the ultrasonic generation unit comprises a vibration chamber and an ultrasonic generation layer on the vibration chamber, and
wherein the ultrasonic generation layer is configured to propel a surrounding medium to vibrate to generate ultrasonic waves in response to a voltage difference between the upper electrode and the lower electrode,
wherein the ultrasonic generation unit is selected from the group consisting of a capacitive ultrasonic generation unit and a piezoelectric ultrasonic generation unit,
wherein the ultrasonic generation layer of the capacitive ultrasonic generation unit comprises:
a silicon nitride layer comprising a plurality of etched holes; and
a porous silicon layer between the silicon nitride layer and the upper electrode,
wherein the ultrasonic generation layer of the piezoelectric ultrasonic generation unit comprises:
a silicon nitride layer comprising a plurality of etched holes;
a porous silicon layer on the silicon nitride layer; and
a piezoelectric film layer between the porous silicon layer and the upper electrode.
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