US 11,659,338 B2
Ultrasonic generator, method of manufacturing the same, display panel and screen sound producing system
Yanling Han, Beijing (CN); Haisheng Wang, Beijing (CN); Xiaoliang Ding, Beijing (CN); Yingming Liu, Beijing (CN); Pengpeng Wang, Beijing (CN); Chihjen Cheng, Beijing (CN); Ping Zhang, Beijing (CN); and Xueyou Cao, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 16/640,148
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Jul. 19, 2019, PCT No. PCT/CN2019/096789
§ 371(c)(1), (2) Date Feb. 19, 2020,
PCT Pub. No. WO2020/024815, PCT Pub. Date Feb. 6, 2020.
Claims priority of application No. 201810864137.X (CN), filed on Aug. 1, 2018.
Prior Publication US 2020/0171540 A1, Jun. 4, 2020
Int. Cl. B06B 1/06 (2006.01); H04R 17/00 (2006.01); H04R 31/00 (2006.01); B06B 1/02 (2006.01)
CPC H04R 17/005 (2013.01) [H04R 31/00 (2013.01); B06B 1/0292 (2013.01); B06B 1/0629 (2013.01); H04R 2201/401 (2013.01); H04R 2217/03 (2013.01); H04R 2499/15 (2013.01); H10K 59/00 (2023.02)] 10 Claims
OG exemplary drawing
 
1. An ultrasonic generator comprising:
a substrate;
a lower electrode on the substrate;
an upper electrode on the lower electrode; and
an ultrasonic generation unit between the lower electrode and the upper electrode,
wherein the ultrasonic generation unit comprises a vibration chamber and an ultrasonic generation layer on the vibration chamber, and
wherein the ultrasonic generation layer is configured to propel a surrounding medium to vibrate to generate ultrasonic waves in response to a voltage difference between the upper electrode and the lower electrode,
wherein the ultrasonic generation unit is selected from the group consisting of a capacitive ultrasonic generation unit and a piezoelectric ultrasonic generation unit,
wherein the ultrasonic generation layer of the capacitive ultrasonic generation unit comprises:
a silicon nitride layer comprising a plurality of etched holes; and
a porous silicon layer between the silicon nitride layer and the upper electrode,
wherein the ultrasonic generation layer of the piezoelectric ultrasonic generation unit comprises:
a silicon nitride layer comprising a plurality of etched holes;
a porous silicon layer on the silicon nitride layer; and
a piezoelectric film layer between the porous silicon layer and the upper electrode.