CPC H01M 4/366 (2013.01) [H01M 4/0428 (2013.01); H01M 4/134 (2013.01); H01M 4/386 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] | 13 Claims |
1. A method for preparing a silicon-based anode material, comprising:
passing a silicon substrate material through a vapor deposition gas to coat a surface of the silicon substrate material with a carbon deposition layer of a certain thickness, wherein the vapor deposition gas includes a first carbon source gas and a second carbon source gas,
wherein, a volume percentage of the first carbon source gas and the second carbon source gas in the vapor deposition gas increases or decreases at different reaction stages for forming the carbon deposition layer, a side of the carbon deposited layer close to the silicon base material is more or less dense than the other side of the carbon deposited layer.
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