US 11,658,277 B2
Method for producing an optoelectronic component, and optoelectronic component
Guido Weiss, Pielenhofen (DE); Christoph Schwarzmaier, Regensburg (DE); Dominik Scholz, Bad Abbach (DE); and Nicole Heitzer, Brennberg (DE)
Assigned to OSRAM OLED GmbH, Regensburg (DE)
Filed by OSRAM OLED GmbH, Regensburg (DE)
Filed on Jul. 2, 2021, as Appl. No. 17/366,747.
Application 17/366,747 is a continuation of application No. 16/495,219, granted, now 11,094,866, previously published as PCT/EP2018/057049, filed on Mar. 20, 2018.
Claims priority of application No. 102017106410.9 (DE), filed on Mar. 24, 2017.
Prior Publication US 2021/0336111 A1, Oct. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/60 (2010.01); C25D 7/12 (2006.01)
CPC H01L 33/62 (2013.01) [C25D 7/123 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 33/60 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13211 (2013.01); H01L 2224/13218 (2013.01); H01L 2224/13224 (2013.01); H01L 2224/13239 (2013.01); H01L 2224/13244 (2013.01); H01L 2224/13247 (2013.01); H01L 2224/13269 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for producing an optoelectronic component, the method comprising:
providing a semiconductor chip having an active region for radiation emission;
applying a seed layer on the semiconductor chip, wherein the seed layer comprises a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal;
applying a structured photoresist layer directly to the seed layer; and
applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer,
wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.