CPC H01L 33/60 (2013.01) [H01L 33/0093 (2020.05); H01L 33/08 (2013.01); H01L 33/385 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 33/54 (2013.01); H01L 33/46 (2013.01); H01L 33/52 (2013.01); H01L 33/56 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0025 (2013.01)] | 20 Claims |
1. A method comprising:
providing a semiconductor structure comprising an active region between an n-type region and a p-type region, the semiconductor structure being divided into a plurality of light-emitting devices (LEDs) separated by a gap between adjacent LEDs of the plurality of LEDs;
removing a portion of the p-type region and the active region in the gap to form a first exposed surface region of the n-type region and in a region adjacent the gap to form a second exposed surface region;
disposing a dielectric layer at least directly on the first exposed surface region;
disposing an underfill in areas between the semiconductor structure and a mount at least directly on a portion of the dielectric layer and the second exposed surface region; and
attaching the semiconductor structure to the mount.
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