CPC H01L 29/785 (2013.01) [H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 29/66795 (2013.01)] | 20 Claims |
1. A semiconductor device structure, comprising:
a gate stack and a contact over a fin structure;
a gate spacer layer between the gate stack and the contact;
a first mask layer over the gate stack; and
a second mask layer over the contact, wherein the first mask layer includes a protruding portion sandwiched between an upper portion of the second mask layer and the gate spacer layer.
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