CPC H01L 29/42392 (2013.01) [H01L 21/823475 (2013.01); H01L 29/0665 (2013.01); H01L 29/42356 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
first nanostructures;
a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure;
a dielectric fin disposed on the isolation structure and in contact with a sidewall of the first gate structure; and
a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure,
wherein a bottom surface of the first gate structure is in direct contact with the backside gate contact.
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