US 11,658,220 B2
Drain side recess for back-side power rail device
Huan-Chieh Su, Tianzhong Township (TW); Cheng-Chi Chuang, New Taipei (TW); Chih-Hao Wang, Baoshan Township (TW); and Kuo-Cheng Chiang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Dec. 16, 2020, as Appl. No. 17/123,873.
Claims priority of provisional application 63/014,880, filed on Apr. 24, 2020.
Prior Publication US 2021/0336019 A1, Oct. 28, 2021
Int. Cl. H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01)
CPC H01L 29/4175 (2013.01) [H01L 29/0673 (2013.01); H01L 29/41725 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor transistor device, comprising:
a channel structure;
a gate structure wrapping around the channel structure;
a first source/drain epitaxial structure and a second source/drain epitaxial structure disposed on opposite endings of the channel structure, the second source/drain epitaxial structure having a concave bottom surface; and
a back-side source/drain contact disposed under the first source/drain epitaxial structure; and
a first dielectric liner disposed along a sidewall of the back-side source/drain contact.