US 11,658,212 B2
Quantum dot devices with conductive liners
Hubert C. George, Portland, OR (US); Ravi Pillarisetty, Portland, OR (US); Lester Lampert, Portland, OR (US); James S. Clarke, Portland, OR (US); Nicole K. Thomas, Portland, OR (US); Stephanie A. Bojarski, Beaverton, OR (US); Roman Caudillo, Portland, OR (US); David J. Michalak, Portland, OR (US); Jeanette M. Roberts, North Plains, OR (US); and Thomas Francis Watson, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 13, 2019, as Appl. No. 16/274,572.
Prior Publication US 2020/0258984 A1, Aug. 13, 2020
Int. Cl. H01L 29/12 (2006.01); H01L 29/16 (2006.01); G06N 10/00 (2022.01); H01L 29/78 (2006.01); H01L 23/522 (2006.01)
CPC H01L 29/122 (2013.01) [G06N 10/00 (2019.01); H01L 29/16 (2013.01); H01L 29/7851 (2013.01); H01L 23/5226 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a base;
a first fin extending from the base, wherein the first fin includes a quantum well layer;
a second fin extending from the base;
a first conductive material between the first fin and the second fin;
a first dielectric material between the first conductive material and the first fin;
a second conductive material between the first conductive material and the second fin; and
a second dielectric material between the second conductive material and the second fin.