US 11,658,199 B2
Image sensor with through silicon fin transfer gate
Qin Wang, San Jose, CA (US); and Gang Chen, San Jose, CA (US)
Assigned to OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed by OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed on Aug. 20, 2020, as Appl. No. 16/998,815.
Prior Publication US 2022/0059600 A1, Feb. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14643 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14609 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A device, comprising:
a photodiode disposed in a semiconductor material, wherein the photodiode is coupled to generate charges in response to incident light, wherein the photodiode has a photodiode region of a substantially uniform doping profile throughout a depth of the photodiode in the semiconductor material;
a floating diffusion region disposed in the semiconductor material;
a transfer gate disposed between the photodiode and the floating diffusion region, wherein the transfer gate includes a plurality of fin structures; and
a channel region associated with the transfer gate, disposed in the semiconductor material proximate to the transfer gate, wherein the transfer gate is coupled to transfer the charges from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate.