US 11,658,138 B2
Semiconductor device including uneven contact in passivation layer
Yen-Jui Chu, Taichung (TW); and Jin-Neng Wu, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Feb. 24, 2022, as Appl. No. 17/679,122.
Application 17/679,122 is a division of application No. 16/929,109, filed on Jul. 15, 2020, granted, now 11,309,267.
Prior Publication US 2022/0181282 A1, Jun. 9, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 24/03 (2013.01); H01L 24/45 (2013.01); H01L 24/85 (2013.01); H01L 2224/05017 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a passivation layer disposed on a substrate; and
a connector embedded in the passivation layer, wherein an interface of the connector in contact with the passivation layer is uneven, wherein the connector comprises:
a body portion having opposite sidewalls perpendicular to the substrate;
and a plurality of protrusion portions protruding outward from the opposite sidewalls of the body portion, wherein the plurality of protrusion portions are staggered with each other in a Z direction.