CPC H01L 23/528 (2013.01) [H01L 21/76898 (2013.01); H01L 21/823871 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 27/092 (2013.01)] | 8 Claims |
1. A semiconductor structure comprising:
a front-end-of-line region comprising two or more devices;
a first back-end-of-line region on a first side of the front-end-of-line region, the first back-end-of-line region comprising a first set of interconnects for at least a first subset of the two or more devices in the front-end-of-line region;
a second back-end-of-line region on a second side of the front-end-of-line region opposite the first side of the front-end-of-line region, the second back-end-of-line region comprising a second set of interconnects for at least a second subset of the two or more devices in the front-end-of-line region; and
one or more passthrough vias disposed in the front-end-of-line region, each of the one or more passthrough vias connecting at least one of the first set of interconnects of the first back-end-of-line region to at least one of the second set of interconnects of the second back-end-of-line region.
|