US 11,658,114 B2
Fusible structures and methods of manufacturing same
Shao-Ting Wu, Hsinchu (TW); Meng-Sheng Chang, Hsinchu (TW); Shao-Yu Chou, Hsinchu (TW); and Chung-I Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 13, 2021, as Appl. No. 17/229,345.
Claims priority of provisional application 63/092,914, filed on Oct. 16, 2020.
Prior Publication US 2022/0122914 A1, Apr. 21, 2022
Int. Cl. H01L 23/525 (2006.01); H01L 27/112 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 23/5256 (2013.01) [H01L 27/11206 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A fusible structure comprising:
a metal line extending along a first direction; and
a first dummy structure disposed proximal to the metal line relative to a second direction, the second direction being perpendicular to the first direction, the first dummy structure being in a metal layer; and
wherein:
relative to the first direction, the metal line includes first, second and third portions, the second portion being between the first portion and third portion;
relative to a third direction that is perpendicular to the first direction and the second direction, the first portion has a first thickness and the second portion has a second thickness, the first thickness is greater than the second thickness; and
the first dummy structure is proximal to the second portion of the metal line.