US 11,658,065 B2
Chemical mechanical polishing slurry composition, method for chemical mechanical polishing and method for forming connecting structure
Ji Cui, Bolingbrook, IL (US); Fu-Ming Huang, Changhua (TW); Ting-Kui Chang, New Taipei (TW); Tang-Kuei Chang, Tainan (TW); Chun-Chieh Lin, Hsinchu (TW); Wei-Wei Liang, Hsinchu (TW); Chi-Hsiang Shen, Tainan (TW); Ting-Hsun Chang, Kaohsiung (TW); Li-Chieh Wu, Hsinchu (TW); Hung Yen, Kaohsiung (TW); Chi-Jen Liu, Taipei (TW); Liang-Guang Chen, Hsinchu (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 15, 2020, as Appl. No. 16/902,203.
Prior Publication US 2021/0391208 A1, Dec. 16, 2021
Int. Cl. H01L 21/768 (2006.01); C09K 3/14 (2006.01); C09G 1/02 (2006.01); H01L 21/321 (2006.01)
CPC H01L 21/7684 (2013.01) [C09G 1/02 (2013.01); C09K 3/1463 (2013.01); C09K 3/1481 (2013.01); H01L 21/3212 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chemical-mechanical polishing (CMP) slurry composition, comprising:
a first oxidizer comprising halogen oxyacid or its salt;
a second oxidizer comprising aqueous ozone (O3); and
one or more abrasive particles,
wherein an ozone concentration of the aqueous ozone is between approximately 200 parts per million (ppm) and approximately 7000 ppm.