US 11,658,014 B2
Apparatuses and methods of protecting nickel and nickel containing components with thin films
Pingyan Lei, San Jose, CA (US); Dien-Yeh Wu, San Jose, CA (US); Xiao Ming He, Santa Clara, CA (US); Jennifer Y. Sun, Fremont, CA (US); Lei Zhou, San Jose, CA (US); Takashi Kuratomi, Campbell, CA (US); Avgerinos V. Gelatos, Scotts Valley, CA (US); Mei Chang, Santa Clara, CA (US); and Steven D. Marcus, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Apr. 11, 2020, as Appl. No. 16/846,295.
Prior Publication US 2021/0319983 A1, Oct. 14, 2021
Int. Cl. C23C 16/06 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01)
CPC H01J 37/32477 (2013.01) [C23C 16/06 (2013.01); C23C 16/4404 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); H01J 37/32467 (2013.01); H01L 21/28556 (2013.01); H01L 21/67017 (2013.01); H01J 2237/3321 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of depositing a coating on a semiconductor manufacturing apparatus component using an atomic layer deposition process, comprising:
1) in a deposition reactor, contacting a semiconductor manufacturing apparatus component comprising nickel or nickel alloy with an aluminum precursor; followed by
2) contacting the semiconductor manufacturing apparatus component comprising nickel or nickel alloy with a reactant; followed by
3) purging the deposition reactor; followed by
repeating 1, 2, and 3 to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component comprising nickel or nickel alloy; and
annealing the aluminum containing layer at a temperature of up to 1000 degrees Celsius in a nitrogen atmosphere.