CPC G11C 11/412 (2013.01) [H01L 27/1104 (2013.01)] | 20 Claims |
1. A memory cell, comprising:
a first gate structure, a second gate structure, a third gate structure, a fourth gate structure, and a fifth gate structure that each extend along a first lateral direction, wherein the first and second gate structures are aligned with each other, with the fourth and fifth gate structures aligned with a first segment and a second segment of the third gate structure, respectively;
a first active structure extending along a second lateral direction and overlaid by respective first portions of the first to fourth gate structures, the second lateral direction perpendicular to the first lateral direction;
a second active structure extending along the second lateral direction and overlaid by respective second portions of the first to fourth gate structures; and
a third active structure extending along the second lateral direction and overlaid by respective third portions of the third and fifth gate structures.
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