US 11,656,988 B2
Memory device and operation method thereof
Han-Wen Hu, Tainan (TW); Yung-Chun Li, New Taipei (TW); Bo-Rong Lin, Taichung (TW); and Huai-Mu Wang, New Taipei (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Dec. 6, 2021, as Appl. No. 17/542,557.
Claims priority of provisional application 63/175,554, filed on Apr. 16, 2021.
Prior Publication US 2022/0334964 A1, Oct. 20, 2022
Int. Cl. G06F 12/00 (2006.01); G06F 12/0802 (2016.01)
CPC G06F 12/0802 (2013.01) [G06F 2212/1024 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device including;
a plurality of page buffers, storing an input data;
a plurality of memory planes coupled to the page buffers, a plurality of weights stored in the memory planes, based on received addresses of the memory planes, the memory planes performing bit multiplication on the weights and the input data in the page buffers in parallel to generate a plurality of bit multiplication results in parallel, the bit multiplication results stored back to the page buffers; and
at least one accumulation circuit coupled to the page buffers, for performing bit accumulation on the bit multiplication results of the memory planes in parallel or in sequential to generate a multiply-accumulate (MAC) operation result.