US 11,656,934 B2
Managing open blocks in memory systems
Yi-Chun Liu, Zhubei (TW); Wei Jie Chen, Hsinchu (TW); Ching Ting Lu, New Taipei (TW); and Zheng Wu, Taoyuan (TW)
Assigned to Macronix International Co., Ltd., Hsinchu (TW)
Filed by Macronix International Co., Ltd., Hsinchu (TW)
Filed on Apr. 27, 2022, as Appl. No. 17/730,548.
Application 17/730,548 is a continuation of application No. 16/906,712, filed on Jun. 19, 2020, granted, now 11,340,980.
Prior Publication US 2022/0253352 A1, Aug. 11, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 29/00 (2006.01); G06F 11/10 (2006.01); G06F 11/07 (2006.01); G06F 11/30 (2006.01); G11C 16/08 (2006.01); G06F 12/0882 (2016.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01); G06F 12/02 (2006.01)
CPC G06F 11/1044 (2013.01) [G06F 11/076 (2013.01); G06F 11/1068 (2013.01); G06F 11/3037 (2013.01); G06F 12/0246 (2013.01); G06F 12/0882 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/3431 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of managing open blocks in a memory, the method comprising:
evaluating a read disturbance level of an open block in the memory, the open block comprising one or more programmed pages associated with one or more programmed word lines and one or more blank pages associated with one or more blank word lines; and
in response to determining that the read disturbance level of the open block is beyond a threshold level, managing memory cells in at least one of the one or more blank word lines in the open block for data storage such that each memory cell in the at least one of the one or more blank word lines in the open block has a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines in the open block.