US 11,656,789 B2
Asymmetric read sense
Jonas Goode, Lake Forest, CA (US); Richard Galbraith, Rochester, MN (US); Henry Yip, Bellflower, CA (US); and Vinh Hoang, Laguna Hills, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Aug. 25, 2021, as Appl. No. 17/412,158.
Prior Publication US 2023/0066469 A1, Mar. 2, 2023
Int. Cl. G06F 3/06 (2006.01); G11C 29/50 (2006.01); G11C 7/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G11C 7/06 (2013.01); G11C 29/50004 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A data storage device, comprising:
a memory device comprising a plurality of wordlines, each comprising a plurality of cells; and
a cell statistics generator (CSG) disposed on the memory device, the CSG comprising logic configured to:
receive a first read sense at a threshold voltage of one or more threshold voltages of each cell of a wordline of the plurality of wordlines;
determine that a second read sense is required based on the first read sense, wherein the second read sense comprises a plurality of left senses at a left threshold voltage and a plurality of right senses at a right threshold voltage;
determine a deviation parameter and a dispersion parameter for an asymmetric adjustment of the left threshold voltage and the right threshold voltage; and
adjust the left threshold voltage and the right threshold voltage based on the deviation parameter and the dispersion parameter.