US 11,656,181 B2
Inspection apparatus and inspection method for inspecting light-emitting diodes
Yan-Rung Lin, Hsinchu (TW); Chih-Hsiang Liu, Hsinchu County (TW); Chung-Lun Kuo, New Taipei (TW); Hsiang-Chun Wei, Hsinchu (TW); Yeou-Sung Lin, Changhua County (TW); and Chieh-Yi Lo, Kaohsiung (TW)
Assigned to Industrial Technology Research Institute, Hsinchu (TW)
Filed by Industrial Technology Research Institute, Hsinchu (TW)
Filed on Dec. 28, 2020, as Appl. No. 17/135,874.
Application 17/135,874 is a continuation in part of application No. 16/231,607, filed on Dec. 24, 2018, granted, now 11,002,783.
Claims priority of application No. 107146378 (TW), filed on Dec. 21, 2018.
Prior Publication US 2021/0231570 A1, Jul. 29, 2021
Int. Cl. G01N 21/66 (2006.01); G01N 21/88 (2006.01)
CPC G01N 21/66 (2013.01) [G01N 21/8806 (2013.01); G01N 2201/062 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An inspection method for inspecting light-emitting diodes, comprising
providing a light-emitting diode wafer comprising a plurality of light-emitting diodes, wherein the light-emitting diode wafer comprises a plurality of scan regions, each of the scan regions has a plurality of first light-emitting diodes of the plurality of light-emitting diodes, the scan regions comprise m scan regions, the m scan regions comprise a 1st scan region to a mth scan region, and m is a positive integer greater than or equal to 2;
scanning the 1st scan region to the mth scan region of the light-emitting diode wafer to respectively obtain 1st relative height information to mth relative height information corresponding to the 1st scan region to the mth scan region;
the light-emitting diode wafer comprising a plurality of to-be-inspected regions, each of the to-be-inspected regions comprising a plurality of second light-emitting diodes of the plurality of light-emitting diodes, measuring a 1st real-time distance between a photoelectric sensing structure of a sensing probe and one of the to-be-inspected regions of the light-emitting diode wafer and adjusting a distance between the photoelectric sensing structure of the sensing probe and the to-be-inspected region of the light-emitting diode wafer to a target distance according to the 1st real-time distance;
allowing an illumination beam to simultaneously irradiate the plurality of second light-emitting diodes of the to-be-inspected region to generate a first charge distribution, a first electric field distribution, or a first voltage distribution on the plurality of second light-emitting diodes of the to-be-inspected region due to a photovoltaic effect caused by the illumination beam;
using the sensing probe to measure the first charge distribution, the first electric field distribution, or the first voltage distribution on the plurality of second light-emitting diodes of the to-be-inspected region to determine a plurality of first electro-optical characteristics of the plurality of second light-emitting diodes of the to-be-inspected region when the target distance between the photoelectric sensing structure of the sensing probe and the to-be-inspected region of the light-emitting diode wafer is kept;
adjusting a distance between the photoelectric sensing structure of the sensing probe and a next to-be-inspected region of the light-emitting diode wafer to the target distance according to at least two of the 1st relative height information to the mth relative height information;
allowing the illumination beam to simultaneously irradiate the plurality of second light-emitting diodes of the next to-be-inspected region to generate a second charge distribution, a second electric field distribution, or a second voltage distribution on the plurality of second light-emitting diodes of the next to-be-inspected region due to the photovoltaic effect caused by the illumination beam; and
using the sensing probe to measure the second charge distribution, the second electric field distribution, or the second voltage distribution on the plurality of second light-emitting diodes of the next to-be-inspected region to determine a plurality of second electro-optical characteristics of the plurality of second light-emitting diodes of the next to-be-inspected region when the target distance between the photoelectric sensing structure of the sensing probe and the next to-be-inspected region of the light-emitting diode wafer is kept.