US 11,655,557 B2
Methods and devices for growing crystals with high uniformity without annealing
Yu Wang, Meishan (CN); Weiming Guan, Meishan (CN); Zhenxing Liang, Meishan (CN); and Min Li, Meishan (CN)
Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Meishan (CN)
Filed by MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Sichuan (CN)
Filed on Mar. 29, 2021, as Appl. No. 17/216,659.
Application 17/216,659 is a continuation of application No. PCT/CN2020/094684, filed on Jun. 5, 2020.
Prior Publication US 2021/0381122 A1, Dec. 9, 2021
Int. Cl. C30B 35/00 (2006.01); C30B 15/02 (2006.01); C30B 15/22 (2006.01); C30B 29/22 (2006.01); C30B 15/10 (2006.01); C30B 15/14 (2006.01); C30B 29/28 (2006.01); C30B 29/34 (2006.01)
CPC C30B 15/02 (2013.01) [C30B 15/10 (2013.01); C30B 15/14 (2013.01); C30B 15/22 (2013.01); C30B 29/22 (2013.01); C30B 29/28 (2013.01); C30B 29/34 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A crystal growth device, comprising a temperature field device and a feeding component configured to feed reactant supplements into a crucible, wherein
the crucible includes an inner crucible and an outer crucible, the inner crucible and the outer crucible including a sealed gap where a feed port used to receive reactant supplements and an exhaust port used to exhaust gas are provided;
the temperature field device includes a bottom plate, a cover plate, a first drum, a second drum, and a filler, wherein
the bottom plate is mounted on a bottom of the temperature field device and covers an open end of the first drum,
the cover plate is mounted on a top of the temperature field device and covers the other open end of the first drum,
the second drum is mounted inside the first drum, and
the filler is filled in the second drum and/or a space between the second drum and the first drum.