CPC C23C 16/52 (2013.01) [C01B 33/03 (2013.01); C23C 16/24 (2013.01)] | 8 Claims |
1. A method for producing polycrystalline silicon by the Siemens process, comprising introducing a reaction gas containing hydrogen and silane and/or halosilane into a reaction space of a Siemens chemical vapour deposition reactor, wherein the reaction space comprises at least one heated support body on which elemental silicon is deposited by means of chemical vapour deposition to form the polycrystalline silicon, wherein, outside the reaction space at at least one position of at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded, wherein the measurement device is coupled to a process control station, and wherein an instance of one or more support bodies falling over is determined by means of the duration and intensity of the measured vibrations.
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