CPC H10N 52/01 (2023.02) [H10B 61/00 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02)] | 15 Claims |
1. A method for fabricating a semiconductor device, comprising:
forming a magnetic tunneling junction (MTJ) stack on a substrate;
forming a top electrode on the MTJ stack;
forming an etch stop layer on the top electrode;
forming a first spin orbit torque (SOT) layer on the etch stop layer; and
patterning the first SOT layer, the etch stop layer, and the MTJ stack to form a MTJ.
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