US 11,968,908 B2
Magnetic tunnel junction device
Tai-Yen Peng, Hsinchu (TW); Hui-Hsien Wei, Taoyuan (TW); Han-Ting Lin, Hsinchu (TW); Sin-Yi Yang, Taichung (TW); Yu-Shu Chen, Hsinchu (TW); An-Shen Chang, Jubei (TW); Qiang Fu, Hsinchu (TW); and Chen-Jung Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/854,289.
Application 17/854,289 is a division of application No. 16/746,158, filed on Jan. 17, 2020, granted, now 11,387,406.
Prior Publication US 2022/0336727 A1, Oct. 20, 2022
Int. Cl. H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); H10B 61/20 (2023.02); H10N 50/01 (2023.02); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first inter-metal dielectric over a semiconductor substrate, the semiconductor substrate comprising active devices;
a first conductive feature extending through the first inter-metal dielectric, the first conductive feature electrically connected to the active devices;
a first bottom electrode over the first conductive feature;
a first magnetic tunnel junction stack over the first bottom electrode;
a first top electrode comprising:
a first conductive layer over the first magnetic tunnel junction stack;
a dielectric layer over the first conductive layer; and
a second conductive layer over the dielectric layer;
a second inter-metal dielectric over the first top electrode; and
a second conductive feature extending through the second inter-metal dielectric, the second conductive feature contacting the first top electrode.